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MMG3010NT1 Datasheet(数据表) 2 Page - NXP Semiconductors

部件型号  MMG3010NT1
说明  Heterojunction Bipolar Transistor (InGaP HBT)
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
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MMG3010NT1 Datasheet(HTML) 2 Page - NXP Semiconductors

 
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RF Device Data
Freescale Semiconductor
MMG3010NT1
Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small -Signal Gain (S21)
Gp
14
15
dB
Input Return Loss (S11)
IRL
-15
dB
Output Return Loss (S22)
ORL
-25
dB
Power Output @ 1dB Compression
P1dB
17
dBm
Third Order Output Intercept Point
IP3
31
dBm
Noise Figure
NF
4.5
dB
Supply Current (1)
ICC
46
54
63
mA
Supply Voltage (1)
VCC
5
V
1. For reliable operation, the junction temperature should not exceed 150°C.




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