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2SD917 Datasheet(数据表) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD917
说明  SPTECH Silicon NPN Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD917 Datasheet(HTML) 2 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
2
SPTECH Silicon NPN Power Transistor
2SD917
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 10mA ; IB= 0
200
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.0
V
VBE(sat)
Base -Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.2
V
ICES
Collector Cutoff Current
VCE= 330V ; VBE= 0
1
mA
VCE= 300V; VBE= 0, Ta= 100℃
15
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
1
mA
hFE
DC Current Gain
IC= 5A ; VCE= 4V
15
45
tf
Fall Time
IC= 5A ,RB= 0.5Ω,
IB1= 0.8A,VEB= 5V
0.75
μ
s




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