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2SD689 Datasheet(数据表) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2SD689
说明  SPTECH Silicon NPN Darlington Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2SD689 Datasheet(HTML) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Darlington Power Transistor
2SD689
DESCRIPTION
·
High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·
Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·
Complement to Type 2SB679
APPLICATIONS
·
Low frequency medium power amplifier and medium speed
switching applications.
·
Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
1.5
A
PC
Collector Power Dissipation
TC=25℃
10
W
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150




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