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FDC6432SH Datasheet(数据表) 2 Page - Fairchild Semiconductor

部件型号  FDC6432SH
说明  12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
下载  8 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDC6432SH Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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FDC6432SH Rev B (W)
Electrical CharacteristicsT
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Q
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V,
ID = 1 mA
VGS = 0 V,
ID = –250 µA
Q1
Q2
30
–12
V
∆BVDSS
∆TJ
Breakdown Voltage
Temperature Coefficient
ID = 1 mA, Ref to 25°C
ID = –250 µA, Ref to 25°C
Q1
Q2
25
–10
mV/°C
IDSS
Zero Gate Voltage Drain
Current
VDS = 24 V,
VGS = 0 V
VDS = –10 V, VGS = 0 V
Q1
Q2
500
1
µA
IGSS
Gate-Body Leakage
VGS = ±16 V, VDS = 0 V
VGS = ±8 V,
VDS = 0 V
Q1
Q2
±100
±100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 1 mA
VDS = VGS,
ID = –250 µA
Q1
Q2
1
–0.4
1.5
–0.7
3
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 1 mA, Ref to 25°C
ID = –250 µA, Ref to 25°C
Q1
Q2
–7
3
mV/°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V,
ID = 2.4A
VGS = 4.5V,
ID = 2.2A
VGS=10V,ID=2.4A,TJ=125°C
Q1
75
85
100
90
105
140
m
RDS(on)
Static Drain-Source
On-Resistance
VGS = –4.5V, ID = –2.5A
VGS = –2.5V, ID = –2.0A
VGS = –1.8V, ID = –1.6A
VGS=–4.5V,ID=2.5A,TJ=125°C
Q2
75
97
154
86
90
125
220
120
m
gFS
Forward Transconductance
VDS = 10 V,
ID = 1 mA
VDS = –5 V
ID = –2.5A
Q1
Q2
7
7
S
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
Q2
5
13
Dynamic Characteristics
Ciss
Input Capacitance
Q1
Q2
270
514
pF
Coss
Output Capacitance
Q1
Q2
50
234
pF
Crss
Reverse Transfer Capacitance
For Q1:
VDS=15V, VGS=0V, f=1MHz
For Q2:
VDS= –6V, VGS=0V, f=1MHz
Q1
Q2
20
167
pF
Switching Characteristics (Note 2)
td(on)
Turn-on Delay Time
Q1
Q2
5
13
10
23
ns
tr
Turn-on Rise Time
Q1
Q2
8
12
16
22
ns
td(off)
Turn-off Delay Time
Q1
Q2
18
22
32
35
ns
tf
Turn-off Fall Time
For Q1:
VDS = 15 V, ID= 1 A,
VGS = 10 V, RGEN = 6 Ω
For Q2:
VDS = –10 V, ID= –1 A,
VGS = –4.5 V, RGEN = 6 Ω
Q1
Q2
1.2
29
2.4
46
ns
Qg
Total Gate Charge
Q1
Q2
2.5
5.7
3.5
8
nC
Qgs
Gate-Source Charge
Q1
Q2
0.7
1.2
nC
Qgd
Gate-Drain Charge
For Q1:
VDS = 15 V, ID= 2.4 A,
VGS = 5 V
For Q2:
VDS = –10 V, ID= –2.5 A,
VGS = –4.5 V
Q1
Q2
0.6
1.7
nC




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