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FDC6432SH Datasheet(数据表) 5 Page - Fairchild Semiconductor

部件型号  FDC6432SH
说明  12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
下载  8 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDC6432SH Datasheet(HTML) 5 Page - Fairchild Semiconductor

   
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FDC6432SH Rev B (W)
Typical Characteristics : Q1
0
2
4
6
8
10
01
23
45
Qg, GATE CHARGE (nC)
ID = 2.4A
VDS = 10V
15V
20V
0
100
200
300
400
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Ciss
Coss
f = 1 MHz
VGS = 0 V
Crss
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100µs
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 175
oC/W
TA = 25
oC
10ms
1ms
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
t1, TIME (sec)
SINGLE PULSE
RθJA = 175°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 175
oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.




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