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FDC6432SH Datasheet(数据表) 3 Page - Fairchild Semiconductor

部件型号  FDC6432SH
说明  12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
下载  8 Pages
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDC6432SH Datasheet(HTML) 3 Page - Fairchild Semiconductor

   
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FDC6432SH Rev B (W)
Electrical CharacteristicsT
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Q
Min
Typ
Max
Units
Drain-Source Diode Characteristics
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 0.7A, Note 2
VGS = 0 V, IS = –0.8A, Note 2
Q1
Q2
0.6
–0.7
700
1200
mV
tRR
Reverse Recovery Time
Q1
Q2
10
24
ns
IRM
Maximum Reverse Recovery
Current
Q1
Q2
0.8
–0.5
A
QRR
Reverse Recovery Charge
For Q1:
IF = 2.4A, dIF/dt = 300A/µs
For Q2:
IF = –2.5A, dIF/dt = 100A/µs
Q1
Q2
4
6
nC
Notes:
1. R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a)
100°C/W when
mounted on a 1in
2 pad
of 2 oz copper
b)
175°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%




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