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2NC6888 Datasheet(数据表) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

部件型号  2NC6888
说明  SPTECH Silicon NPN Power Transistor
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制造商  SPTECH [Shenzhen SPTECH Microelectronics Co., Ltd.]
网页  http://www.superic-tech.com/
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2NC6888 Datasheet(HTML) 1 Page - Shenzhen SPTECH Microelectronics Co., Ltd.

   
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SPTECH Product Specification
SPTECH website:www.superic-tech.com
1
SPTECH Silicon NPN Power Transistor
2NC6888
DESCRIPTION
·
Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·
Good Linearity of hFE
APPLICATIONS
·
Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
14
A
IB
Base Current-Continuous
3
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150




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