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SI4394DY-E3 数据表(PDF) 2 Page - Vishay Siliconix |
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SI4394DY-E3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si4394DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 72713 S-40442—Rev. A, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.6 1.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 15 A 0.0066 0.00825 W Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 14 A 0.0077 0.00975 W Forward Transconductancea gfs VDS = 15 V, ID = 15 A 65 S Diode Forward Voltagea VSD IS = 2.9 A, VGS = 0 V 0.73 1.1 V Dynamicb Input Capacitance Ciss 1900 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 530 pF Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg 12.5 Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 15 A 3.9 nC Gate-Drain Charge Qgd DS GS D 2.1 Gate Resistance Rg f = 1 MHz 0.8 1.2 1.8 W Turn-On Delay Time td(on) 13 20 Rise Time tr VDD = 15 V, RL = 15 W 8 13 Turn-Off Delay Time td(off) VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 48 75 ns Fall Time tf 13 20 Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms 36 55 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 012345 VGS = 10 thru 3 V TC = 125_C −55_C 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 2 V |
类似零件编号 - SI4394DY-E3 |
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类似说明 - SI4394DY-E3 |
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