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UPD4564163G5 数据表(PDF) 34 Page - Elpida Memory

部件名 UPD4564163G5
功能描述  64M-bit Synchronous DRAM 4-bank, LVTTL
Download  85 Pages
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制造商  ELPIDA [Elpida Memory]
网页  http://www.elpida.com/en
标志 ELPIDA - Elpida Memory

UPD4564163G5 数据表(HTML) 34 Page - Elpida Memory

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Data Sheet E0149N10
34
µµµµPD4564441, 4564841, 4564163
13. Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100
µs and then, execute Power on sequence and CBR (auto) Refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Voltage on power supply pin relative to GND
VCC, VCCQ
−0.5 to +4.6
V
Voltage on any pin relative to GND
VT
−0.5 to +4.6
V
Short circuit output current
IO
50
mA
Power dissipation
PD
1
W
Operating ambient temperature
TA
0 to 70
°C
Storage temperature
Tstg
−55 to + 125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
VCC, VCCQ
3.0
3.3
3.6
V
High level input voltage
VIH
2.0
VCC+0.3
Note1
V
Low level input voltage
VIL
−0.3 Note2
+0.8
V
Operating ambient temperature
TA
0
70
°C
Notes 1. VIH(MAX.) = VCC + 1.5 V (Pulse width
≤ 5 ns)
2. VIL(MIN.) = –1.5 V (Pulse width
≤ 5 ns)
Pin Capacitance (TA = 25
°°°°C, f = 1 MHz)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Input capacitance
CI1
A0 - A13
2.5
4
pF
CI2
CLK, CKE, /CS, /RAS, /CAS, /WE,
DQM, UDQM, LDQM
2.5
4
Data input / output capacitance
CI/O
DQ0 - DQ15
4
6.5
pF


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