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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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EBE51RD8AEFA Datasheet(数据表) 6 Page - Elpida Memory |
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EBE51RD8AEFA Datasheet(HTML) 6 Page - Elpida Memory |
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6 page 
EBE51RD8AEFA Data Sheet E0645E30 (Ver. 3.0) 6 Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 27 Minimum row precharge time (tRP) -5C, -4A 0 0 1 1 1 1 0 0 3CH 15ns 28 Minimum row active to row active delay (tRRD) 0 0 0 1 1 1 1 0 1EH 7.5ns 29 Minimum /RAS to /CAS delay (tRCD) -5C, -4A 0 0 1 1 1 1 0 0 3CH 15ns 30 Minimum active to precharge time (tRAS) -5C 0 0 1 0 1 1 0 1 2DH 45ns -4A 0 0 1 0 1 0 0 0 28H 40ns 31 Module rank density 1 0 0 0 0 0 0 0 80H 512M byte 32 Address and command setup time before clock (tIS) -5C 0 0 1 0 0 1 0 1 25H 0.25ns* 1 -4A 0 0 1 1 0 1 0 1 35H 0.35ns* 1 33 Address and command hold time after clock (tIH) -5C 0 0 1 1 1 0 0 0 38H 0.38ns* 1 -4A 0 1 0 0 1 0 0 0 48H 0.48ns* 1 34 Data input setup time before clock (tDS) -5C 0 0 0 1 0 0 0 0 10H 0.10ns* 1 -4A 0 0 0 1 0 1 0 1 15H 0.15ns* 1 35 Data input hold time after clock (tDH) -5C 0 0 1 0 0 0 1 1 23H 0.23ns* 1 -4A 0 0 1 0 1 0 0 0 28H 0.28ns* 1 36 Write recovery time (tWR) 0 0 1 1 1 1 0 0 3CH 15ns* 1 37 Internal write to read command delay (tWTR) -5C 0 0 0 1 1 1 1 0 1EH 7.5ns* 1 -4A 0 0 1 0 1 0 0 0 28H 10ns* 1 38 Internal read to precharge command delay (tRTP) 0 0 0 1 1 1 1 0 1EH 7.5ns* 1 39 Memory analysis probe characteristics 0 0 0 0 0 0 0 0 00H TBD 40 Extension of Byte 41 and 42 0 0 0 0 0 0 0 0 00H Undefined 41 Active command period (tRC) -5C 0 0 1 1 1 1 0 0 3CH 60ns* 1 -4A 0 0 1 1 0 1 1 1 37H 55ns* 1 42 Auto refresh to active/ Auto refresh command cycle (tRFC) 0 1 1 0 1 0 0 1 69H 105ns* 1 43 SDRAM tCK cycle max. (tCK max.) 1 0 0 0 0 0 0 0 80H 8ns* 1 44 Dout to DQS skew -5C 0 0 0 1 1 1 1 0 1EH 0.30ns* 1 -4A 0 0 1 0 0 0 1 1 23H 0.35ns* 1 45 Data hold skew (tQHS) -5C 0 0 1 0 1 0 0 0 28H 0.40ns* 1 -4A 0 0 1 0 1 1 0 1 2DH 0.45ns* 1 46 PLL relock time 0 0 0 0 1 1 1 1 0FH 15 µs 47 to 61 0 0 0 0 0 0 0 0 00H |
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