EBE21RD4AGFA datasheet(1/23 Pages) ELPIDA

部件名	EBE21RD4AGFA

功能描述	2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks)

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制造商	ELPIDA [Elpida Memory]

网页	http://www.elpida.com/en

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Document No. E0794E20 (Ver. 2.0)

Date Published October 2005 (K) Japan

Printed in Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2005

DATA SHEET

2GB Registered DDR2 SDRAM DIMM

EBE21RD4AGFA (256M words

× 72 bits, 2 Ranks)

Description

The EBE21RD4AGFA is a 256M words

× 72 bits, 2

ranks DDR2 SDRAM Module, mounting 36 pieces of

512M bits DDR2 SDRAM sealed in FBGA (

µBGA)

package. Read and write operations are performed at

the cross points of the CK and the /CK.

This high-

speed data transfer is realized by the 4bits prefetch-

pipelined architecture. Data strobe (DQS and /DQS)

both for read and write are available for high speed and

reliable data bus design.

By setting extended mode

register, the on-chip Delay Locked Loop (DLL) can be

set enable or disable.

This module provides high

density

mounting

without

utilizing

surface

mount

technology.

Decoupling capacitors are mounted

beside each FBGA (

µBGA) on the module board.

Note: Do not push the cover or drop the modules in

order to avoid mechanical defects, which may

result in electrical defects.

Features

• 240-pin socket type dual in line memory module

(DIMM)

 PCB height: 30.0mm

 Lead pitch: 1.0mm

 Lead-free (RoHS compliant)

• Power supply: VDD = 1.8V ± 0.1V

• Data rate: 667Mbps/533Mbps/400Mbps (max.)

• SSTL_18 compatible I/O

• Double-data-rate architecture: two data transfers per

clock cycle

• Bi-directional, data strobe (DQS and /DQS) is

transmitted /received with data, to be used in

capturing data at the receiver

• DQS is edge aligned with data for READs; center

aligned with data for WRITEs

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge; data

referenced to both edges of DQS

• Four internal banks for concurrent operation

(components)

• Burst length: 4, 8

• /CAS latency (CL): 3, 4, 5

• Auto precharge option for each burst access

• Auto refresh and self refresh modes

• Average refresh period

 7.8µs at 0°C ≤ TC ≤ +85°C

 3.9µs at +85°C < TC ≤ +95°C

• Posted CAS by programmable additive latency for

better command and data bus efficiency

• Off-Chip-Driver Impedance Adjustment and On-Die-

Termination for better signal quality

• /DQS can be disabled for single-ended Data Strobe

operation

• 1 piece of PLL clock driver, 4 piece of register driver

and 1 piece of serial EEPROM (2k bits EEPROM) for

Presence Detect (PD)

类似零件编号 - EBE21RD4AGFA

制造商	部件名	数据表	功能描述
Elpida Memory	EBE21RD4AGFB	215Kb / 23P	2GB Registered DDR2 SDRAM DIMM
	EBE21RD4AGFB-4A-E	215Kb / 23P	2GB Registered DDR2 SDRAM DIMM
	EBE21RD4AGFB-5C-E	215Kb / 23P	2GB Registered DDR2 SDRAM DIMM
	EBE21RD4AGFB-6E-E	215Kb / 23P	2GB Registered DDR2 SDRAM DIMM

More results

类似说明 - EBE21RD4AGFA

制造商	部件名	数据表	功能描述
Elpida Memory	EBE21RD4ABHA	173Kb / 22P	2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks)
	EBE21RD4AEFA	193Kb / 22P	2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 2 Ranks)
	EBE20RE4AAFA	191Kb / 22P	2GB Registered DDR2 SDRAM DIMM (256M words x 72 bits, 1 Rank)
	EBD21RD4ADNA	176Kb / 19P	2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks)
	EBD21RD4ADNA-E	201Kb / 19P	2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks)
	EBE41RE4AAHA	200Kb / 22P	4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)
	EBE11ED8AEFA	192Kb / 22P	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
	EBE11ED8AEFA-6	198Kb / 22P	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
	EBE11ED8ABFA	175Kb / 22P	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)
	EBE11ED8AGFA	208Kb / 23P	1GB Unbuffered DDR2 SDRAM DIMM (128M words x 72 bits, 2 Ranks)

More results

EBE21RD4AGFA 数据表(PDF) 1 Page - Elpida Memory

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