EBD51RC4AKFA-E

Data Sheet E0608E10 (Ver. 1.0)

11

DC Characteristics 1 (TA = 0 to +70°C, VDD = 2.5V ± 0.2V, VSS = 0V)

Parameter

Symbol

Grade

max.

Unit

Test condition

Notes

Operating current (ACTV-PRE)

IDD0

-6B

-7A, -7B

2190

2010

mA

CKE ≥ VIH,

tRC = tRC (min.)

1, 2, 9

Operating current

(ACTV-READ-PRE)

IDD1

-6B

-7A, -7B

2640

2370

mA

CKE ≥ VIH, BL = 4,

CL = 3.5, tRC = tRC (min.)

1, 2, 5

Idle power down standby current IDD2P

444

mA

CKE ≤ VIL

4

Floating idle standby current

IDD2F

-6B

-7A, -7B

840

750

mA

CKE ≥ VIH, /CS ≥ VIH,

DQ, DQS, DM = VREF

4, 5

Quiet idle standby current

IDD2Q

-6B

-7A, -7B

750

714

mA

CKE ≥ VIH, /CS ≥ VIH,

DQ, DQS, DM = VREF

4, 10

Active power down standby

current

IDD3P

-6B

-7A, -7B

750

714

mA

CKE ≤ VIL

3

Active standby current

IDD3N

-6B

-7A, -7B

1380

1290

mA

CKE ≥ VIH, /CS ≥ VIH

tRAS = tRAS (max.)

3, 5, 6

Operating current

(Burst read operation)

IDD4R

-6B

-7A, -7B

3450

3090

mA

CKE ≥ VIH, BL = 2,

CL = 3.5

1, 2, 5, 6

Operating current

(Burst write operation)

IDD4W

-6B

-7A, -7B

3630

3270

mA

CKE ≥ VIH, BL = 2,

CL = 3.5

1, 2, 5, 6

Auto refresh current

IDD5

-6B

-7A, -7B

3450

3360

mA

tRFC = tRFC (min.),

Input ≤ VIL or ≥ VIH

Self refresh current

IDD6

444

mA

Input ≥ VDD – 0.2 V

Input ≤ 0.2 V

Operating current

(4 banks interleaving)

IDD7A

-6B

-7A, -7B

6150

5250

mA

BL = 4

1, 5, 6, 7

Notes. 1. These IDD data are measured under condition that DQ pins are not connected.

2. One bank operation.

3. One bank active.

4. All banks idle.

5. Command/Address transition once per one cycle.

6. DQ, DM and DQS transition twice per one cycle.

7. 4 banks active. Only one bank is running at tRC = tRC (min.)

8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.

9. Command/Address transition once every two clock cycles.

10. Command/Address stable at ≥ VIH or ≤ VIL.

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)

(DDR SDRAM component Specification)

Parameter

Symbol

min.

max.

Unit

Test condition

Note

Input leakage current

ILI

–2

2

µA

VDD ≥ VIN ≥ VSS

Output leakage current

ILO

–5

5

µA

VDDQ ≥ VOUT ≥ VSS

Output high current

IOH

–15.2

—

mA

VOUT = 1.95V

Output low current

IOL

15.2

—

mA

VOUT = 0.35V