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KM732V696L 数据表(PDF) 2 Page - Samsung semiconductor

部件名 KM732V696L
功能描述  64Kx32 Synchronous SRAM
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM732V696L 数据表(HTML) 2 Page - Samsung semiconductor

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PRELIMINARY
KM732V696/L
64Kx32 Synchronous SRAM
Rev 1.0
- 2 -
May 1997
WEc
WEd
64Kx32-Bit Synchronous Pipelined Burst SRAM
The KM732V696/L is a 2,097,152 bit Synchronous Static Ran-
dom Access Memory designed for high performance second
level cache of Pentium and Power PC based System.
It is organized as 64K words of 32bits and integrates address
and control registers, a 2-bit burst address counter and added
some new functions for high performance cache RAM applica-
tions; GW, BW, LBO, ZZ. Write cycles are internally self-timed
and synchronous.
Full bus-width write is done by GW, and each byte write is per-
formed by the combination of WEx and BW when GW is high.
And with CS1 high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status pro-
cessor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated internally in
the system
′s burst sequence and are controlled by the burst
address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(linear
or interleaved).
ZZ pin controls Power Down State and reduces Stand-by cur-
rent regardless of CLK.
The KM732V696/L is fabricated using SAMSUNG
′s high per-
formance CMOS technology and is available in a 100pin TQFP
package. Multiple power and ground pins are utilized to mini-
mize ground bounce.
GENERAL DESCRIPTION
FEATURES
LOGIC BLOCK DIAGRAM
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• VDD=3.3V-5%/+10% Power Supply for 3.3V I/O
• VDD=3.3V
±5% Power Supply for 2.5V I/O
• I/O Supply Voltage : 3.3V-5%/+10% for 3.3V I/O
or 2.5V+0.4V/-0.13V for 2.5V I/O
• 5V Tolerant Inputs except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a
linear burst.
• Three Chip Enables for simple depth expansion with No Data
Contention ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A
CLK
LBO
ADV
ADSC
ADSP
CS1
CS2
CS2
GW
BW
WEa
WEb
OE
ZZ
DQa0 ~ DQd7
BURST CONTROL
LOGIC
BURST
64Kx32
ADDRESS
CONTROL
OUTPUT
DATA-IN
ADDRESS
COUNTER
MEMORY
ARRAY
REGISTER
REGISTER
BUFFER
LOGIC
A
0~A′1
A0 ~ A1
A2~A15
A0~A15
REGISTER
FAST ACCESS TIMES
Parameter
Symbol
-13
-15
Unit
Cycle Time
tCYC
13
15
ns
Clock Access Time
tCD
7
8
ns
Output Enable Access Time
tOE
6
7
ns


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