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CMOSH2-4L 数据表(PDF) 1 Page - Central Semiconductor Corp |
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CMOSH2-4L 数据表(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 40 V Continuous Forward Current IF 200 mA Peak Repetitive Forward Current IFRM 350 mA Forward Surge Current, tp=10ms IFSM 1.0 A Power Dissipation PD 250 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=20V 11 50 µA BVR IR=100µA40 53 V VF IF=10mA 0.24 0.325 V VF IF=100mA 0.35 0.4 V VF IF=200mA 0.42 0.5 V CT VR=4.0V, f=1.0MHz 8.5 10 pF trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 4.0 5.0 ns CMOSH2-4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE SOD-523 CASE Central Semiconductor Corp. TM R2 (17-September 2004) DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH2-4L is a high current, low VF silicon Schottky diode in an SOD-523 surface mount package. This device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required. MARKING CODE: 4L |
类似零件编号 - CMOSH2-4L |
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类似说明 - CMOSH2-4L |
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