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STD1805-1 数据表(PDF) 2 Page - STMicroelectronics |
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STD1805-1 数据表(HTML) 2 Page - STMicroelectronics |
2 / 8 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 8.33 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 40 V 0.1 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 4 V 0.1 µA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 100 µA 150 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = 1 mA 60 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 100 µA 7V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 100 mA IB = 5 mA IC = 2 A IB = 50 mA IC = 3 A IB = 150 mA IC = 5 A IB = 200 mA 150 200 50 300 400 600 mV mV mV mV VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IB = 100 mA 0.9 1.2 V hFE ∗ DC Current Gain IC = 100 mA VCE = 2 V IC = 5 A VCE = 2 V IC = 10 A VCE = 2 V 200 85 20 400 fT Transition frequency VCE = 10 V IC = 50 mA 150 MHz CCBO Collector-Base Capacitance VCB = 10 V f = 1 MHz 50 pF tON ts tf RESISTIVE LOAD Turn- on Time Storage Time Fall Time IC = 1 A VCC = 30 V IB1 = - IB2 = 0.1 A 50 1.35 120 ns µs ns * Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % STD1805 2/8 |
类似零件编号 - STD1805-1 |
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类似说明 - STD1805-1 |
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