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SUD50N03-09P Datasheet(数据表) 2 Page - Vishay Siliconix

部件型号  SUD50N03-09P
说明  N-Channel 30-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SUD50N03-09P Datasheet(HTML) 2 Page - Vishay Siliconix

   
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SUD50N03-09P
Vishay Siliconix
www.vishay.com
2
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1.0
3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V, TJ = 125_C
50
mA
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
50
A
VGS = 10 V, ID = 20 A
0.0076
0.0095
Drain-Source On-State Resistanceb
rDS(on)
VGS = 10 V, ID = 20 A, TJ = 125_C
0.015
W
Drain Source On State Resistance
rDS(on)
VGS = 4.5 V, ID = 20 A
0.0115
0.014
W
Forward Transconductanceb
gfs
VDS = 15 V, ID = 20 A
20
S
Dynamica
Input Capacitance
Ciss
2200
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
410
pF
Reverse Transfer Capacitance
Crss
180
p
Total Gate Chargec
Qg
11
16
Gate-Source Chargec
Qgs
VDS = 15 V, VGS = 4.5 V, ID = 50 A
7.5
nC
Gate-Drain Chargec
Qgd
VDS 15 V, VGS 4.5 V, ID 50 A
5.0
nC
Gate Resistance
Rg
0.5
1.5
2.1
W
Turn-On Delay Timec
td(on)
9
15
Rise Timec
tr
VDD = 15 V, RL = 0.3 W
80
120
ns
Turn-Off Delay Timec
td(off)
VDD = 15 V, RL = 0.3 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
22
35
ns
Fall Timec
tf
g
8
12
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
100
A
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
1.2
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 50 A, di/dt = 100 A/ms
35
70
ns
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
c.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
30
60
90
120
0
2468
10
0
30
60
90
120
0
123
456
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
25_C
−55_C
5 V
TC = 125_C
VGS = 10 thru 6 V
3 V
4 V
2 V




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