SUD50N03-09P datasheet(1/4 Pages) VISHAY

部件名	SUD50N03-09P

功能描述	N-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D Optimized for High- or Low-Side

D 100% Rg Tested

APPLICATIONS

D DC/DC Converters

D Synchronous Rectifiers

SUD50N03-09P

Vishay Siliconix

Document Number: 71856

S-40573—Rev. E, 29-Mar-04

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)b

30

0.0095 @ VGS = 10 V

63b

30

0.014 @ VGS = 4.5 V

52b

D

G

S

N-Channel MOSFET

TO-252

S

GD

Top View

Drain Connected to Tab

Ordering Information: SUD50N03-09P

SUD50N03-09P—E3 (Lead Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Currenta

TC = 25_C

ID

63b

Continuous Drain Currenta

TC = 100_C

ID

44.5b

Pulsed Drain Current

IDM

50

A

Continuous Source Current (Diode Conduction)a

IS

10

Avalanche Current

L = 0 1 mH

IAS

35

Single Pulse Avalanche Energy

L = 0.1 mH

EAS

61

mJ

Maximum Power Dissipation

TC = 25_C

PD

65.2

W

Maximum Power Dissipation

TA = 25_C

PD

7.5a

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 175

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction to Ambienta

t v 10 sec

R

16

20

Maximum Junction-to-Ambienta

Steady State

RthJA

40

50

_C/W

Maximum Junction-to-Case

RthJC

1.8

2.3

C/W

Notes

a.

Surface Mounted on FR4 Board, t v 10 sec.

b.

Based on maximum allowable Junction Temperature, package limitation current is 50 A.

类似零件编号 - SUD50N03-09P

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	SUD50N03-09P	916Kb / 8P	N-Channel 30-V (D-S) MOSFET
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类似说明 - SUD50N03-09P

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