Z0109NA0 datasheet(7/13 Pages) WEEN

部件名	Z0109NA0

功能描述	4Q Triac

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制造商	WEEN [WeEn Semiconductors]

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7 / 13 page

WeEn Semiconductors

Z0109NA0

4Q Triac

Z0109NA0

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Product data sheet

17 September 2018

7 / 13

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

0.4

-

10

mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

0.4

-

10

mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

0.4

-

10

mA

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 7

0.4

-

10

mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

-

15

mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

-

30

mA

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

-

15

mA

IL

latching current

VD = 12 V; IG = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 8

-

15

mA

IH

holding current

VD = 12 V; Tj = 25 °C; Fig. 9

-

10

mA

VT

on-state voltage

IT = 1 A; Tj = 25 °C; Fig. 10

-

1.3

1.6

V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

-

1

V

VGT

gate trigger voltage

VD = 800 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.2

-

V

ID

off-state current

VD = 800 V; Tj = 125 °C

-

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM = 536 V; Tj = 110 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit; Fig. 12

120

-

V/µs

dVcom/dt

rate of change of

commutating voltage

VD = 400 V; Tj = 110 °C; dIcom/

dt = 0.44 A/ms; gate open circuit

2

-

V/µs

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