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L6919ETR 数据表(PDF) 4 Page - STMicroelectronics |
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L6919ETR 数据表(HTML) 4 Page - STMicroelectronics |
4 / 33 page L6919E 4/33 DIFFERENTIAL CURRENT SENSING IISEN1, IISEN2 Bias Current ILOAD = 0 45 50 55 µA IPGNDSx Bias Current 45 50 55 µA IISEN1, IISEN2 Bias Current at Over Current Threshold 80 85 90 µA IFB Active Droop Current ILOAD ≤ 0% ILOAD = 100% 47.5 0 50 1 52.5 µA µA GATE DRIVERS tRISE HGATE High Side Rise Time VBOOTx-VPHASEx=10V; CHGATEx to PHASEx=3.3nF 15 30 ns IHGATEx High Side Source Current VBOOTx-VPHASEx=10V 2 A RHGATEx High Side Sink Resistance VBOOTx-VPHASEx=12V; 1.5 2 2.5 Ω tRISE LGATE Low Side Rise Time VCCDR=10V; CLGATEx to PGNDx=5.6nF 30 55 ns ILGATEx Low Side Source Current VCCDR=10V 1.8 A RLGATEx Low Side Sink Resistance VCCDR=12V 0.7 1.1 1.5 Ω PROTECTIONS PGOOD Upper Threshold (VSEN/DAC Output) VSEN Rising 108 112 116 % PGOOD Lower Threshold (VSEN/DAC Output) VSEN Falling 84 88 92 % OVP Over Voltage Threshold (VSEN) VSEN Rising 1.915 2.05 V UVP Under Voltage Trip (VSEN/DAC Output) VSEN Falling 55 60 65 % VPGOODL PGOOD Voltage Low IPGOOD = -4mA 0.4 V IPGOODH PGOOD Leakage VPGOOD = 5V 1 µA ELECTRICAL CHARACTERISTICS (continued) VCC = 12V ±15%, TJ = 0 to 70°C unless otherwise specified Symbol Parameter Test Condition Min Typ Max Unit |
类似零件编号 - L6919ETR |
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类似说明 - L6919ETR |
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