HM5112805F-6 datasheet(4/34 Pages) HITACHI

部件名	HM5112805F-6

功能描述	128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh

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制造商	HITACHI [Hitachi Semiconductor]

网页	http://www.renesas.com/eng

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4 / 34 page

HM5112805F-6, HM5113805F-6

4

Pin Arrangement (HM5113805F)

(Top view)

32-pin TSOP

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

VCC

I/O0

I/O1

I/O2

I/O3

NC

VCC

WE

RAS

A0

A1

A2

A3

A4

A5

VCC

VSS

I/O7

I/O6

I/O5

I/O4

VSS

CAS

OE

NC

A11

A10

A9

A8

A7

A6

VSS

Pin Description

Pin name

Function

A0 to A11

Address input

— Row/Refresh address A0 to A11

— Column address

A0 to A11

I/O0 to I/O7

Data input/output

RAS

Row address strobe

CAS

Column address strobe

WE

Write enable

OE

Output enable

V

CC

Power supply

V

SS

Ground

NC

No connection

类似零件编号 - HM5112805F-6

制造商	部件名	数据表	功能描述
Elpida Memory	HM5112805FLTD-6	214Kb / 32P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh
Elpida Memory	HM5112805FTD-5	270Kb / 31P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh

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类似说明 - HM5112805F-6

制造商	部件名	数据表	功能描述
Elpida Memory	HM5112805FLTD-6	214Kb / 32P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh
Elpida Memory	HM5112805FTD-5	270Kb / 31P	128M EDO DRAM (16-Mword 횞 8-bit) 8k refresh/4k refresh
Hitachi Semiconductor	HM5165165F	510Kb / 37P	64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
Elpida Memory	HM5113165FTD-6	257Kb / 27P	128M EDO DRAM (8-Mword 횞 16-bit) 4k refresh
	HM5113165LTD-6	272Kb / 31P	128M EDO DRAM (8-Mword 횞 16-bit) 4k refresh
	HM5164165F	315Kb / 36P	64M EDO DRAM (4-Mword 횞 16-bit) 8k refresh/4k refresh
Hitachi Semiconductor	HM5116405	316Kb / 35P	16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
Elpida Memory	HM5117805	549Kb / 32P	16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh
Hitachi Semiconductor	HM5116100	217Kb / 24P	16M FP DRAM (16-Mword x 1-bit) 4k Refresh
Elpida Memory	HM51W17805	560Kb / 32P	16 M EDO DRAM (2-Mword x 8-bit) 2 k Refresh