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2SC5859 数据表(PDF) 4 Page - Toshiba Semiconductor |
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2SC5859 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 5 page 2SC5859 2004-5-18 4 PC – Tc rth(j-c) – tw Pulse width tw (s) 10 0.001 10μ 1000 100μ 1m 100m 10 100 0.01 1 Tc = 25℃ (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.1 10m 1 Collector-emitter voltage VCE (V) Safe Operating Area 0.01 100 1 ms* 10 ms* VCEO max 100 µs* 100 ms* IC max (Continuous)* 1 100 1000 10 1 10 0.1 10 µs* DC operation Tc = 25°C *:Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (Pulse)* Case temperature Tc (°C) 0 0 25 75 100 125 150 50 150 200 250 100 50 Infinite heat sink Collector-emitter voltage VCE (V) Reverse Bias – Safe Operating Area 100 0.1 0.001 10 10000 10 100 Ta = 25℃ Non repeated pulse IB2 = −3A L = 500 μH 1 0.01 1000 VCBO max IC max (Pulse) 620V,46A 1700V,0.14A |
类似零件编号 - 2SC5859 |
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类似说明 - 2SC5859 |
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