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2SC5859 数据表(PDF) 4 Page - Toshiba Semiconductor

部件名 2SC5859
功能描述  TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

2SC5859 数据表(HTML) 4 Page - Toshiba Semiconductor

  2SC5859 Datasheet HTML 1Page - Toshiba Semiconductor 2SC5859 Datasheet HTML 2Page - Toshiba Semiconductor 2SC5859 Datasheet HTML 3Page - Toshiba Semiconductor 2SC5859 Datasheet HTML 4Page - Toshiba Semiconductor 2SC5859 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC5859
2004-5-18
4
PC – Tc
rth(j-c) – tw
Pulse width tw (s)
10
0.001
10μ
1000
100μ
1m
100m
10
100
0.01
1
Tc = 25℃ (Infinite heat sink)
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
0.1
10m
1
Collector-emitter voltage VCE (V)
Safe Operating Area
0.01
100
1 ms*
10 ms*
VCEO max
100 µs*
100 ms*
IC max (Continuous)*
1
100
1000
10
1
10
0.1
10 µs*
DC operation
Tc = 25°C
*:Single nonrepetitive pulse
Tc = 25°C
Curves
must
be
derated
linearly
with
increase
in
temperature.
IC max (Pulse)*
Case temperature Tc (°C)
0
0
25
75
100
125
150
50
150
200
250
100
50
Infinite heat sink
Collector-emitter voltage VCE (V)
Reverse Bias – Safe Operating Area
100
0.1
0.001
10
10000
10
100
Ta = 25℃
Non repeated pulse
IB2 = −3A
L = 500 μH
1
0.01
1000
VCBO max
IC max (Pulse)
620V,46A
1700V,0.14A


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