STG8207 datasheet(2/7 Pages) SAMHOP

部件名	STG8207

功能描述	Dual N-Channel E nhancement Mode F ield E ffect Transistor

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制造商	SAMHOP [SamHop Microelectronics Corp.]

网页	http://www.samhop.com.tw

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2 / 7 page

S T G 8207

E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)

=

Parameter

Symbol

Condition

Min Typ Max Unit

OFF CHAR ACTER ISTICS

Drain-Source Breakdown Voltage

BVDSS

=

VGS 0V, ID 250uA

=

20

V

Zero Gate Voltage Drain Current

IDSS

VDS 16V, VGS 0V

=

1

uA

Gate-Body Leakage

IGSS

VGS 12V,VDS 0V

=

100 nA

ON CHAR ACTER ISTICS b

Gate Threshold Voltage

VGS(th)

VDS VGS, ID = 250uA

=

0.5

V

Drain-Source On-State R esistance

R DS(ON)

c

C

2

m ohm

FS

c

17

S

Forward Transconductance

g

VDS 5V, ID 5A

DYNAMIC CHAR ACTER ISTICS

Input Capacitance

CISS

CRSS

COSS

Output Capacitance

R everse Transfer Capacitance

VDS =8V, VGS = 0V

f =1.0MHZ

P

F

P

F

P

F

SWITCHING CHAR ACTER ISTICS

Turn-On Delay Time

R ise Time

Turn-Off Delay Time

tD(ON)

tr

tD(OFF)

tf

VDD = 10V

ID = 1A

VGEN = 4.5V

R L = 10 ohm

R GEN = 10 ohm

ns

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

Qgd

VDS =10V, ID = 5A

VGS =4.5V

nC

Fall Time

=

VGS 2.5V, ID 3A

=

m ohm

24

VGS 4.5V, ID 5A

=

16

1800

400

320

58.5

16

110.5

45.8

27

3.8

7.8

1.5

12

20

0.8

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