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KMM372V3280BS1 数据表(PDF) 4 Page - Samsung semiconductor |
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KMM372V3280BS1 数据表(HTML) 4 Page - Samsung semiconductor |
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4 / 18 page  DRAM MODULE KMM372V320(8)0BS1 CAPACITANCE (TA = 25 °C, f = 1MHz) Item Symbol Min Max Unit Input capacitance[A0, B0, A1 - A12] Input capacitance[W0, W2, OE0, OE2] Input capacitance[RAS0 - RAS3] Input capacitance[CAS0, 1, 4, 5] Input/Output capacitance[DQ0 - 71] CIN1 CIN2 CIN3 CIN4 CDQ - - - - - 20 20 73 20 24 pF pF pF pF pF Test condition : Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V, output loading CL=100pF Parameter Symbol -5 -6 Unit Note Min Max Min Max Random read or write cycle time tRC 90 110 ns Read-modify-write cycle time tRWC 133 155 ns Access time from RAS tRAC 50 60 ns 3,4,10 Access time from CAS tCAC 18 20 ns 3,4,5,11 Access time from column address tAA 30 35 ns 3,10,11 CAS to output in Low-Z tCLZ 5 5 ns 3,11 Output buffer turn-off delay tOFF 5 18 5 20 ns 6,11 Transition time(rise and fall) tT 1 50 1 50 ns 2 RAS precharge time tRP 30 40 ns RAS pulse width tRAS 50 10K 60 10K ns RAS hold time tRSH 18 20 ns 11 CAS hold time tCSH 48 58 ns 11 CAS pulse width tCAS 13 10K 15 10K ns RAS to CAS delay time tRCD 18 32 18 40 ns 4,11 RAS to column address delay time tRAD 13 20 13 25 ns 10,11 CAS to RAS precharge time tCRP 10 10 ns 11 Row address set-up time tASR 5 5 ns 11 Row address hold time tRAH 8 8 ns 11 Column address set-up time tASC 0 0 ns Column address hold time tCAH 10 10 ns Column address to RAS lead time tRAL 30 35 ns 11 Read command set-up time tRCS 0 0 ns Read command hold referencde to CAS tRCH 0 0 ns 8 Read command hold referenced to RAS tRRH -2 -2 ns 8,11 Write command hold time tWCH 10 10 ns Write command pulse width tWP 10 10 ns Write command to RAS lead time tRWL 20 20 ns 11 Write command to CAS lead time tCWL 13 15 ns Data in set-up time tDS -2 -2 ns 9,11 Data in hold time tDH 15 15 ns 9,11 Refresh period(4K & 8K) tREF 64 64 ms Write command set-up time tWCS 0 0 ns 7 CAS to W delay time tCWD 36 40 ns 7 Column address to W delay time tAWD 48 55 ns 7 CAS prechange to W delay time tCPWD 53 60 ns 7 RAS ro W delay time tRWD 71 83 ns 7,11 AC CHARACTERISTICS (0 °C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.) |
类似零件编号 - KMM372V3280BS1 |
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类似说明 - KMM372V3280BS1 |
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