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KMM372V213CK 数据表(PDF) 5 Page - Samsung semiconductor |
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KMM372V213CK 数据表(HTML) 5 Page - Samsung semiconductor |
5 / 19 page DRAM MODULE KMM372V213CK/CS Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output loading CL=100pF Parameter Symbol -5 -6 Unit Note Min Max Min Max RAS to W delay time tRWD 71 83 ns 7,11 CAS setup time(CAS-before-RAS refresh) tCSR 10 10 ns 11 CAS hold time(CAS-before-RAS refresh) tCHR 8 8 ns 11 RAS precharge to CAS hold time tRPC 3 3 ns 11 Access time from CAS precharge tCPA 35 40 ns 3,11 Fast page mode cycle time tPC 35 40 ns Fast page mode read-modify-write cycle time tPRWC 75 80 ns CAS precharge time(Fast page cycle) tCP 10 10 ns RAS pulse width (Fast page cycle) tRASP 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 35 40 ns 11 W to RAS precharge time (C-B-R refresh) tWRP 15 15 ns 11 W to RAS hold time (C-B-R refresh) tWRH 8 8 ns 11 OE access time tOEA 18 20 ns 11 OE to data delay tOED 18 20 ns 11 Output buffer turn off delay time from OE tOEZ 5 18 5 20 ns 11 OE command hold time tOEH 13 15 ns PDE to Valid PD bit tPD 10 10 ns PDE to PD bit Inactive tPDOFF 2 7 2 7 ns Present Detect Read Cycle AC CHARACTERISTICS (0 °C≤TA≤70°C, VCC=3.3V±0.3V. See notes 1,2.) |
类似零件编号 - KMM372V213CK |
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类似说明 - KMM372V213CK |
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