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BU323Z 数据表(PDF) 3 Page - ON Semiconductor

部件名 BU323Z
功能描述  AUTOPROTECTED DARLINGTON 10 AMPERES 360-450 VOLTS CLAMP 150 WATTS
Download  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BU323Z 数据表(HTML) 3 Page - ON Semiconductor

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BU323Z
3
Motorola Bipolar Power Transistor Device Data
Figure 1. IC = f(VCE) Curve Shape
IC
INOM = 6.5 A
Output transistor turns on: IC = 40 mA
High Voltage Circuit turns on: IC = 20 mA
Avalanche diode turns on: IC = 100 µA
Icer Leakage Current
250 V
300 V
340 V
VCE
VCLAMP NOMINAL
= 400 V
By design, the BU323Z has a built–in avalanche diode and
a special high voltage driving circuit. During an auto–protect
cycle, the transistor is turned on again as soon as a voltage,
determined by the zener threshold and the network, is
reached. This prevents the transistor from going into a
Reverse Bias Operating limit condition. Therefore, the device
will have an extended safe operating area and will always
appear to be in “FBSOA.” Because of the built–in zener and
associated network, the IC = f(VCE) curve exhibits an
unfamiliar shape compared to standard products as shown in
Figure 1.
Figure 2. Basic Energy Test Circuit
MERCURY CONTACTS
WETTED RELAY
VCE
MONITOR
(VGATE)
L INDUCTANCE
(8 mH)
IB CURRENT
SOURCE
VBEoff
IB2 SOURCE
IC CURRENT
SOURCE
0.1
NON
INDUCTIVE
IC
MONITOR
RBE = 100 Ω
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy tested,
per the test circuit and criteria described in Figures 2 and 4,
to the minimum guaranteed repetitive energy, as specified in
the device parameter section. The device can sustain this
energy on a repetitive basis without degrading any of the
specified electrical characteristics of the devices. The units
under test are kept functional during the complete test se-
quence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100 Ω, Vgate = 280 V, L = 8.0 mH
Figure 3. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
340 V
100
10
0.001
0.01
0.1
1
10
TC = 25°C
250 ms
10 ms
1ms
300
µs
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO


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