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LM1770 数据表(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LM1770
功能描述  SOT-23 Synchronous Buck Controller
Download  14 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM1770 数据表(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN
-0.3V to 6V
Storage Temperature Range
−65˚C to 150˚C
Junction Temperature
150˚C
Lead Temperature
(soldering, 10sec)
260˚C
ESD Rating
2.5kV
Operating Ratings
V
IN to GND
2.8V to 5.5V
Junction Temperature Range (T
J)
−40˚C to
+125˚C
Electrical Characteristics Specifications with standard typeface are for T
J = 25˚C, and those in bold face
type apply over the full Junction Temperature Range (−40˚C to +125˚C). Minimum and Maximum limits are guaranteed
through test, design or statistical correlation. Typical values represent the most likely parametric norm at T
J = 25˚C and are
provided for reference purposes only. Unless otherwise specified V
IN = 3.3V.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VFB
Feedback pin voltage
V
IN = 3.3V
0.782
0.80
0.818
V
V
IN = 5.0V
0.772
0.79
0.808
∆V
FB /
∆V
IN
Line Regulation
V
IN = 2.8V to 5.5V
-5
mV/V
I
Q
Operating Quiescent current
V
FB = 0.9V
400
600
µA
T
ON
Switch On-Time
LM1770S - (500ns)
0.4
0.5
0.6
µs
LM1770T - (1000ns)
0.8
1.0
1.2
LM1770U - (2000ns)
1.6
2.0
2.4
T
OFF_MIN
Minimum Off-Time
LM1770S - (500ns)
150
250
ns
LM1770T - (1000ns)
135
225
LM1770U - (2000ns)
120
220
T
D
Gate Drive Dead-Time
70
ns
I
FB
Feedback pin bias current
V
FB = 0.9V
50
nA
V
UVLO
Under-voltage lock out
V
IN Rising Edge
2.6
2.8
V
V
UVLO_HYS
Under-voltage lock out hysteresis
30
mV
V
SC_TH
Feedback pin Short Circuit Latch
Threshold
0.5
0.55
0.65
V
R
DS(ON) 1
HG FET driver pull-up On resistance
I
HG =20mA
5
R
DS(ON) 2
HG FET driver pull-down On resistance I
HG =20mA
9
R
DS(ON) 3
LG FET driver pull-up On resistance
I
LG =20mA
9
R
DS(ON) 4
LG FET driver pull-down On resistance I
LG =20mA
5
Note 1: Absolute Maximum Ratings indicate limits beyond which damage may occur to the device. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications, see Electrical Characteristics.
www.national.com
3


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