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BD242C 数据表(PDF) 4 Page - ON Semiconductor |
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BD242C 数据表(HTML) 4 Page - ON Semiconductor |
4 / 6 page BD241C BD242B BD242C 4 Motorola Bipolar Power Transistor Device Data 500 0.03 5.0 0.05 0.07 0.1 0.3 0.5 1.0 3.0 100 50 30 10 300 70 TJ = 150°C 25 °C –55 °C VCE = 2.0 V 0.7 7.0 Figure 8. DC Current Gain IC, COLLECTOR CURRENT (AMP) 1.4 0.003 Figure 9. Collector Saturation Region IC, COLLECTOR CURRENT (AMPS) 0.01 0.020.03 0.1 0.2 0.5 1.0 2.0 3.0 0.8 0.6 0.4 0.2 0 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 2.0 1.0 Figure 10. “On” Voltages IB, BASE CURRENT (mA) 0 2.0 5.0 10 20 50 100 200 500 1000 1.6 1.2 0.8 0.4 IC = 0.3 A TJ = 25°C 1.0 A 3.0 A + 2.5 0.003 Figure 11. Temperature Coefficients IC, COLLECTOR CURRENT (AMP) 0.01 0.02 0.05 0.1 0.2 0.3 1.0 2.0 3.0 + 2.0 + 1.5 + 0.5 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 θVB FOR VBE * θVC FOR VCE(sat) *APPLIES FOR IC/IB ≤ 5.0 TJ = – 65°C TO + 150°C 103 – 0.4 Figure 12. Collector Cut–Off Region VBE, BASE–EMITTER VOLTAGE (VOLTS) 102 101 100 10–1 10–2 10–3 – 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 VCE = 30 V TJ = 150°C 100 °C 25 °C REVERSE FORWARD ICES 107 Figure 13. Effects of Base–Emitter Resistance TJ, JUNCTION TEMPERATURE (°C) 20 40 60 80 100 120 140 160 106 105 104 103 102 VCE = 30 V IC = 10 x ICES IC ≈ ICES (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 0.005 0.3 0.05 1.2 1.0 VBE @ VCE = 2.0 V + 1.0 0.5 0.005 IC = 2 x ICES |
类似零件编号 - BD242C |
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类似说明 - BD242C |
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