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FDS4935 Datasheet(数据表) 4 Page - Fairchild Semiconductor

部件型号  FDS4935
说明  Dual 30V P-Channel PowerTrench MOSFET
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制造商  FAIRCHILD [Fairchild Semiconductor]
网页  http://www.fairchildsemi.com
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FDS4935 Datasheet(HTML) 4 Page - Fairchild Semiconductor

   
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FDS4935 Rev B(W)
Typical Characteristics
0
2
4
6
8
10
0
4
8
1216
2024
Qg, GATE CHARGE (nC)
I
D = -8.8A
VDS = -5V
-10V
-15V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
C
OSS
C
RSS
f = 1 MHz
V
GS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
100
µs
RDS(ON) LIMIT
V
GS = -10V
SINGLE PULSE
RθJA = 135
oC/W
TA = 25
oC
10ms
1ms
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1
t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.




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