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BC847BPDW1T1G 数据表(PDF) 8 Page - ON Semiconductor |
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BC847BPDW1T1G 数据表(HTML) 8 Page - ON Semiconductor |
8 / 10 page BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series http://onsemi.com 8 Figure 25. Thermal Response Figure 26. Active Region Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) −200 −1.0 TA = 25°C BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms TJ = 25°C −100 −50 −10 −5.0 −2.0 −5.0 −10 −30 −45 −65 −100 1 s BC558 BC557 BC556 The safe operating area curves indicate IC−VCE lim- its of the transistor that must be observed for reliable op- eration. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 26 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limita- tions will reduce the power that can be handled to values less than the limitations imposed by the secondary break- down. t, TIME (ms) 1.0 1.0 0 0.1 0.01 0.001 10 100 1.0k 10k 100k D = 0.5 0.2 0.1 0.05 SINGLE PULSE ZqJA(t) = r(t) RqJA RqJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) t1 t2 P(pk) DUTY CYCLE, D = t1/t2 1.0M 0.02 0.01 |
类似零件编号 - BC847BPDW1T1G |
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类似说明 - BC847BPDW1T1G |
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