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BC847BPDW1T1G 数据表(PDF) 8 Page - ON Semiconductor

部件名 BC847BPDW1T1G
功能描述  Dual General Purpose Transistors(NPN/PNP Duals)
Download  10 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

BC847BPDW1T1G 数据表(HTML) 8 Page - ON Semiconductor

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BC846BPDW1T1, BC847BPDW1T1 Series, BC848CPDW1T1 Series
http://onsemi.com
8
Figure 25. Thermal Response
Figure 26. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
TA = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
−100
−50
−10
−5.0
−2.0
−5.0
−10
−30 −45 −65 −100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE lim-
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
The data of Figure 26 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure
25. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
t, TIME (ms)
1.0
1.0
0
0.1
0.01
0.001
10
100
1.0k
10k
100k
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
1.0M
0.02
0.01


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