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STK10C68-5C55 Datasheet(数据表) 6 Page - List of Unclassifed Manufacturers

部件型号  STK10C68-5C55
说明  8K X 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM
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制造商  ETC1 [List of Unclassifed Manufacturers]
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 6 page
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STK10C68
September 2003
6
Document Control # ML0006 rev 0.1
MODE SELECTION
Note l:
An automatic RECALL takes place at power up, starting when VCC exceeds 4.25V and taking tRESTORE.
STORE CYCLES #1 & #2
(VCC = 5.0V ± 10%)
Note m: Measured with W and NE both returned high, and G returned low. STORE cycles are inhibited below 4.0V.
Note n: Once tWC has been satisfied by NE, G, W and E, the STORE cycle is completed automatically. Any of NE, G, W or E may be used to terminate
the STORE initiation cycle.
Note o: If E is low for any period of time in which W is high while G and NE are low, then a RECALL cycle may be initiated.
STORE CYCLE #1: W Controlledo
STORE CYCLE #2: E Controlledo
E
W
G
NE
MODE
POWER
H
X
X
X
Not Selected
Standby
L
H
L
H
Read SRAM
Active
L
L
X
H
Write SRAM
Active
L
H
L
L
Nonvolatile RECALLl
Active
L
L
H
L
Nonvolatile STORE
ICC2
L
L
L
H
L
H
L
X
No Operation
Active
NO.
SYMBOLS
PARAMETER
MIN
MAX
UNITS
#1
#2
Alt.
26
tWLQXm
tELQX
tSTORE
STORE Cycle Time
10
ms
27
tWLNHn
tELNH
tWC
STORE Initiation Cycle Time
20
ns
28
tGHNL
Output Disable Set-up to NE Fall
0
ns
29
tGHEL
Output Disable Set-up to E Fall
0
ns
30
tNLWL
tNLEL
NE Set-up
0
ns
31
tELWL
Chip Enable Set-up
0
ns
32
tWLEL
Write Enable Set-up
0
ns
HIGH IMPEDANCE
NE
G
W
E
DQ (DATA OUT)
28
tGHNL
30
tNLWL
27
tWLNH
31
tELWL
26
tWLQX
NE
G
W
E
DQ (DATA OUT)
HIGH IMPEDANCE
30
tNLEL
29
tGHEL
32
tWLEL
27
tELNH
26
tELQX




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