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GS74116ATP-7T 数据表(PDF) 3 Page - GSI Technology |
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GS74116ATP-7T 数据表(HTML) 3 Page - GSI Technology |
3 / 14 page Rev: 1.03 10/2002 3/14 © 2001, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS74116ATP/J/X Note: X: “H” or “L” Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Rec- ommended Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. Truth Table CE OE WE LB UB DQ1 to DQ8 DQ9 to DQ16 VDD Current H X X X X Not Selected Not Selected ISB1, ISB2 LL H L L Read Read IDD L H Read High Z H L High Z Read LX L LL Write Write L H Write Not Write, High Z H L Not Write, High Z Write L H H X X High Z High Z L X X H H High Z High Z Absolute Maximum Ratings Parameter Symbol Rating Unit Supply Voltage VDD –0.5 to +4.6 V Input Voltage VIN –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Output Voltage VOUT –0.5 to VDD +0.5 ( ≤ 4.6 V max.) V Allowable power dissipation PD 0.7 W Storage temperature TSTG –55 to 150 oC |
类似零件编号 - GS74116ATP-7T |
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类似说明 - GS74116ATP-7T |
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