VUB120-12NO1 datasheet(4/4 Pages) IXYS

部件名	VUB120-12NO1

功能描述	Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

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制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

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1

10

100

1000

0

1

2

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5

6

01234

0

10

20

30

40

50

-di

F/dt

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

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0

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0

10

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0

100

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500

600

0.0

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0.8

1.0

0

40

80

120

160

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

400

800

1200

0.1

1

10

100

K

f

Z

thJK

t

-di

F/dt

T

VJ

°C

t

rr

ms

0

100

200

300

400

500

600

0

10

20

30

40

50

60

70

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

FR

mC

V

CE

I

C

A

V

F

I

F

I

RM

A

Q

R

V

A/

ms

V

per Rectifier

Diode

Fast Diode

IGBT

I

F = 30 A

I

F = 60 A

I

F = 30 A

I

F = 15 A

V

-di

F/dt

A/

ms

s

V

FR

t

FR

t

FR

ms

Q

r

T

V

J=100°C

V

R= 540 V

T

V

J=125°C

R

G= 11W

A

max.

I

RM

T

V

J=100°C

V

R= 540 V

-di

F/dt

typ.

max.

T

V

J=100°C

V

R= 540 V

T

V

J=150°CTVJ=25°C

typ.

max.

T

V

J=125°C

I

F = 30A

typ.

A/

ms

I

F = 30 A

I

F = 60 A

I

F = 30 A

I

F = 15 A

I

F = 30 A

I

F = 60 A

I

F = 30 A

I

F = 15 A

200

A/

ms

VUB 120

K/W

Fig. 8 Reverse baised safe operation

Fig. 9 Forward current versus

Fig. 10 Recovery charge versus

area (IGBT)

voltage drop (Fast Diode)

-di

F/dt (Fast Diode)

Fig.11 Peak forward voltage and

Fig.12 Recovery time versus -di

F/dt

Fig.13 Peak reverse current versus

recovery time versus -di

F/dt

(Fast Diode)

-di

F/dt (Fast Diode)

(Fast Diode)

Fig.14 Dynamic parameters versus

Fig.15 Transient thermal impedance junction to heatsink Z

thJK

junction temperature (Fast Diode)

VUB 120

类似零件编号 - VUB120-12NO1

制造商	部件名	数据表	功能描述
IXYS Corporation	VUB120-12NO2	69Kb / 2P	Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System

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类似说明 - VUB120-12NO1

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