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MNDS26F32M-X-RH 数据表(PDF) 6 Page - National Semiconductor (TI) |
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MNDS26F32M-X-RH 数据表(HTML) 6 Page - National Semiconductor (TI) |
6 / 12 page MNDS26F32M-X-RH REV 0C0 MICROCIRCUIT DATA SHEET Electrical Characteristics DC PARAMETERS - DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: NOTE::This section applies to -QMLV devices only and shall be read & recorded at TA = +25C before and after each burn-in and shall not change by more than the limits indicated. The delta rejects shall be included in the PDA calculation. SYMBOL PARAMETER CONDITIONS NOTES PIN- NAME MIN MAX UNIT SUB- GROUPS Voh Logical "1" Output Voltage Vcc = 4.5V, Ioh = -440uA, Delta Vin = 1V, Ven = 0.8V = Ven -250 250 mV 1 Vol Logical "0" Output Voltage Vcc = 4.5V, Iol = 4mA, Delta Vin = -1V, Ven = 0.8V = Ven -45 45 mV 1 Vcc = 4.5V, Iol = 8mA, Delta Vin = -1V, Ven = 0.8V = Ven -45 45 mV 1 Iin Input Current Vcc = 4.5V, Vin=15V (Pin under test), other inputs -15V <= Vin <= +15V -0.28 0.28 mA 1 Vcc = 5.5V, Vin=-15V (Pin under test), other inputs -15V <= Vin <= +15V -0.28 0.28 mA 1 Note 1: Power dissipation must be externally controlled at elevated temperatures. Note 2: Parameter tested go-no-go only. Note 3: Tested at 50pF guarantees limit at 15 & 5pF. Note 4: Tested at 50pF, system capacitance exceeds 5 to 15pF. Note 5: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiaton end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5, Condition A. 6 |
类似零件编号 - MNDS26F32M-X-RH |
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类似说明 - MNDS26F32M-X-RH |
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