SI7370DP-T1-E3 datasheet(1/5 Pages) VISHAY

部件名	SI7370DP-T1-E3

功能描述	N-Channel 60-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

with Low 1.07-mm Profile

D PWM Optimized for Fast Switching

D 100% Rg Tested

APPLICATIONS

D Primary Side Switch for 24-V DC/DC Applications

D Secondary Synchronous Rectifier

Si7370DP

Vishay Siliconix

Document Number: 71874

S-41262—Rev. D, 05-Jul-04

www.vishay.com

1

N-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

60

0.011 @ VGS = 10 V

15.8

60

0.013 @ VGS = 6 V

14.5

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Ordering Information: Si7370DP-T1

Si7370DP-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

15.8

9.6

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

12.6

7.7

Continuous Source Current

IS

4.7

1.7

A

Pulsed Drain Current

IDM

50

Avalanche Current

IAS

50

Single Avalanche Energy

EAS

125

mJ

Maximum Power Dissipation

TA = 25_C

PD

5.2

1.9

W

Maximum Power Dissipation

TA = 70_C

PD

3.3

1.25

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

19

24

Maximum Junction-to-Ambienta

Steady State

RthJA

52

65

_C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

1.5

1.8

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

类似零件编号 - SI7370DP-T1-E3

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Vishay Siliconix	SI7370DP-T1-E3	367Kb / 12P	N-Channel 60 V (D-S) MOSFET 01-Jan-2022

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