数据搜索系统,热门电子元器件搜索 |
|
EMD02N60A 数据表(PDF) 1 Page - Excelliance MOS Corp. |
|
EMD02N60A 数据表(HTML) 1 Page - Excelliance MOS Corp. |
1 / 6 page 2012/1/11 p.1 EMD02N60A G D S N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 600V RDSON (MAX.) 5.5Ω ID 2A UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate‐Source Voltage VGS ±30 V Continuous Drain Current TC = 25 °C ID 2 A TC = 100 °C 1.25 Pulsed Drain Current 1 IDM 8 Avalanche Current IAS 2 Avalanche Energy L = 3mH, ID=2A, RG=25Ω EAS 6 mJ Repetitive Avalanche Energy 2 L = 0.5mH EAR 1 Power Dissipation TC = 25 °C PD 30 W TC = 100 °C 12 Operating Junction & Storage Temperature Range Tj, Tstg ‐55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 4.2 °C / W Junction‐to‐Ambient RJA 110 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% |
类似零件编号 - EMD02N60A |
|
类似说明 - EMD02N60A |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |