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DAM19N80S 数据表(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM19N80S 数据表(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
1 / 4 page N-Channel Enhancement Mode MOSFET Features VDSS = 80V RDS(ON) Typ.10.5mΩ @ VGS = 10V Improved dv/dt capability Fast switching Pb Free & RoHS Compliant Green Device Available Applications Networking Load Switch LED applications Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 80 V Gate Source Voltage VGS ±25 V Drain Current Continuous @ Tc = 25°C ID 19 A @ Tc = 100°C 12 Drain Current Pulsed@ TC = 25°C IDM 48 A Single Pulse Avalanche Energy EAS 180 mJ Single Pulse Avalanche Current IAS 60 A Maximum Power Dissipation PD 10.2 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJC 12.2 °C/W Aug.2018 DAM19N80S Note3 |
类似零件编号 - DAM19N80S |
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类似说明 - DAM19N80S |
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