DAM8N100B datasheet(1/4 Pages) DACO

部件名	DAM8N100B

功能描述	N-Channel Enhancement Mode MOSFET

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制造商	DACO [DACO SEMICONDUCTOR CO.,LTD.]

网页	http://www.dacosemi.com/

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N-Channel Enhancement Mode MOSFET

Features

VDSS = 100V

RDS(ON) Typ.160mΩ @ VGS = 10V

Fully Avalanche Rated

Pb Free & RoHS Compliant

Applications

Backlighting

Synchronous Rectifiers

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

Ratings

Unit

Drain Source Voltage

VDS

100

V

Gate Source Voltage

VGS

±20

V

Drain Current Continuous

@ Tc = 25°C

ID

8

A

@ Tc = 100°C

4.8

Drain Current Pulsed@ TC = 25°C

IDM

32

A

Maximum Power Dissipation

PD

32

W

Storage Temperature Range

TSTG

-50 to +150

°C

Operating Junction Temperature Range

TJ

-50 to +150

°C

Thermal Resistance Junction to Case

RθJc

3.8

°C/W

Aug.2017

DAM8N100B

Thermal Resistance Junction to Ambient

RθJA

62

°C/W

类似零件编号 - DAM8N100B

制造商	部件名	数据表	功能描述
DACO SEMICONDUCTOR CO.,...	DAM8N100D	342Kb / 4P	N-Channel Enhancement Mode MOSFET

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