HY57V281620ELTP-H datasheet(9/13 Pages) HYNIX

部件名	HY57V281620ELTP-H

功能描述	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Download	13 Pages

Scroll/Zoom	100%

制造商	HYNIX [Hynix Semiconductor]

网页	http://www.skhynix.com/kor/main.do

标志

9 / 13 page

Rev. 1.1 / Jan. 2005

9

Synchronous DRAM Memory 128Mbit (8Mx16bit)

HY57V281620E(L)T(P) Series

DC CHARACTERISTICS II (TA= 0 to 70oC)

Note: 1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3. HY57V281620ET(P) Series: Normal Power

HY57V281620ELT(P) Series: Low Power

Parameter

Sym-

bol

Test Condition

Speed

Unit Note

5

6

7

H

Operating Current

IDD1

Burst length=1, One bank active

tRC

≥ tRC(min), IOL=0mA

120

110

100

100 mA

1

Precharge Standby Current

in Power Down Mode

IDD2P

CKE

≤ VIL(max), tCK = 15ns

2

mA

IDD2PS CKE

≤ VIL(max), tCK = ∞

2mA

Precharge Standby Current

in Non Power Down Mode

IDD2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK =

15ns

Input signals are changed one time dur-

ing 2clks.

All other pins

≥ VDD-0.2V or ≤ 0.2V

18

mA

IDD2NS

CKE

≥ VIH(min), tCK = ∞

Input signals are stable.

15

Active Standby Current

in Power Down Mode

IDD3P

CKE

≤ VIL(max), tCK = 15ns

3

mA

IDD3PS CKE

≤ VIL(max), tCK = ∞

3

Active Standby Current

in Non Power Down Mode

IDD3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK =

15ns

Input signals are changed one time dur-

ing 2clks.

All other pins

≥ VDD-0.2V or ≤ 0.2V

40

mA

IDD3NS

CKE

≥ VIH(min), tCK = ∞

Input signals are stable.

35

Burst Mode Operating Cur-

rent

IDD4

tCK

≥ tCK(min), IOL=0mA

All banks active

120

110

100

100 mA

1

Auto Refresh Current

IDD5

tRC

≥ tRC(min), All banks active

210

200

190

190 mA

2

Self Refresh Current

IDD6

CKE

≤ 0.2V

Normal

2mA

3

Low power

800

uA

类似零件编号 - HY57V281620ELTP-H

制造商	部件名	数据表	功能描述
Hynix Semiconductor	HY57V281620A	97Kb / 13P	4 Banks x 2M x 16bits Synchronous DRAM
	HY57V281620ALT-6	97Kb / 13P	4 Banks x 2M x 16bits Synchronous DRAM
	HY57V281620ALT-7	97Kb / 13P	4 Banks x 2M x 16bits Synchronous DRAM
	HY57V281620ALT-8	97Kb / 13P	4 Banks x 2M x 16bits Synchronous DRAM
	HY57V281620ALT-H	97Kb / 13P	4 Banks x 2M x 16bits Synchronous DRAM

More results

类似说明 - HY57V281620ELTP-H

制造商	部件名	数据表	功能描述
Hynix Semiconductor	H57V1262GFR-50X	256Kb / 12P	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
	H57V1262GTR-50X	205Kb / 13P	128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
	H57V2562GTR-60C	234Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
	H57V2562GTR-60I	234Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
	HY57V641620ET	117Kb / 13P	64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
	HY5V66EF6	959Kb / 12P	64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
	H57V2562GFR-60C	279Kb / 23P	256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
	H57V2582GTR-60C	228Kb / 22P	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
	H55S1262EFP-60E	733Kb / 54P	128MBit MOBILE SDR SDRAMs based on 2M x 4Bank x16 I/O
	H57V2582GTR-60I	229Kb / 22P	256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O

More results

HY57V281620ELTP-H 数据表(PDF) 9 Page - Hynix Semiconductor

HY57V281620ELTP-H 数据表(HTML) 9 Page - Hynix Semiconductor

类似零件编号 - HY57V281620ELTP-H

类似说明 - HY57V281620ELTP-H

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载

链接网址

HY57V281620ELTP-H 数据表(PDF) 9 Page - Hynix Semiconductor

HY57V281620ELTP-H 数据表(HTML) 9 Page - Hynix Semiconductor

类似零件编号 - HY57V281620ELTP-H

类似说明 - HY57V281620ELTP-H

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表 下载

链接网址

数据表下载