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GT60M323 数据表(PDF) 4 Page - Toshiba Semiconductor |
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GT60M323 数据表(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page GT60M323 2004-07-06 4 Gate charge QG (nC) VCE, VGE – QG Gate resistance RG (Ω) Switching Time – RG Collector current IC (A) Switching Time – IC Collector-emitter voltage VCE (V) C – VCE Collector- emitter voltage VCE (V) Safe Operating Area Collector-emitter voltage VCE (V) Reverse Bias SOA VCE = 150 V 0 0 60 120 180 240 50 100 150 200 100 50 0 5 10 15 20 Common emitter RL = 2.5 Ω Tc = 25°C Cres 10 1 10 100 1000 10000 100 1000 10000 Coes Cies Common emitter VGE = 0 f = 1 MHz Tc = 25°C 0.01 1 10 100 1000 0.1 1 10 ton toff tr tf Common emitter VCC = 600 V IC = 60 A VGG = ±15 V Tc = 25°C 0.01 010 50 70 0.1 1 10 toff ton tf tr 20 30 40 60 Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V Tc = 25°C 1 1 10 100 1000 10000 10 100 1000 10 µs* 1 ms* 100 µs* 10 ms * IC max (pulsed)* IC max (continuous) DC operation * Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 1 10 100 1000 10000 10 100 1000 Tj <= 125°C VGG = 20 V RG = 10 Ω |
类似零件编号 - GT60M323 |
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类似说明 - GT60M323 |
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