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GT60M322 数据表(PDF) 5 Page - Toshiba Semiconductor |
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GT60M322 数据表(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page GT60M322 2004-07-06 5 Pulse width tw (s) Rth (t) – tw Forward voltage VF (V) Forward current IF (A) trr, Irr – IF IF – VF 0.01 0 5 30 0.1 1 20 15 1 10 100 10− 2 10−4 10− 1 10 0 10 2 10 0 10 1 10 2 10− 1 10− 2 10− 3 10 1 Tc = 25°C Diode stage IGBT stage 0 0 1 4 5 30 40 50 20 3 2 10 Tc = 125°C −40 25 Common collector 10 25 Irr trr Common Collector di/dt = −200 A/µs : Tc = 25°C : Tc = 125°C |
类似零件编号 - GT60M322 |
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类似说明 - GT60M322 |
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