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SEMIX105GD12T4 Datasheet(数据表) 2 Page - Semikron International

部件型号  SEMIX105GD12T4
说明  Trench IGBT Modules
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制造商  SEMIKRON [Semikron International]
网页  http://www.semikron.com
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SEMiX105GD12T4
2
Rev. 0.2 – 10.03.2017
© by SEMIKRON
SEMiX® 5
GD
Trench IGBT Modules
Evaluation Sample
SEMiX105GD12T4
Target Data
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
•VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Product reliability results are valid for
Tjop=150 °C
• Dynamic data are estimated
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Inverse diode
VF = VEC IF = 100 A
VGE =0 V
chiplevel
Tj =25 °C
2.20
2.52
V
Tj =150 °C
2.15
2.47
V
VF0
chiplevel
Tj =25 °C
1.30
1.50
V
Tj =150 °C
0.90
1.10
V
rF
chiplevel
Tj =25 °C
9.0
10
Tj =150 °C
13
14
IRRM
IF = 100 A
di/dtoff =2300 A/µs
VGE =-15 V
VCC = 600 V
Tj =150 °C
-A
Qrr
Tj =150 °C
-µC
Err
Tj =150 °C
12
mJ
Rth(j-c)
per diode
0.43
K/W
Rth(c-s)
per diode (λgrease=0.81 W/mK,
thickness 50-100µm)
t.b.d.
K/W
Rth(c-s)
per diode (λ=3.4 W/mK)
t.b.d.
K/W
Module
LCE
20
nH
RCC'+EE'
measured per
switch
TC =25°C
1.2
TC =125 °C
1.65
Rth(c-s)1
calculated without thermal coupling
t.b.d.
K/W
Rth(c-s)2
including thermal coupling,
Ts underneath module (λgrease=0.81 W/
(m*K))
t.b.d.
K/W
Rth(c-s)2
including thermal coupling,
Ts underneath module, pre-applied
phase change material
t.b.d.
K/W
Ms
to heat sink (M5)
3
6
Nm
Mt
to terminals (M6)
36
Nm
Nm
w398
g
Temperature Sensor
R100
Tc=100°C (R25=5 kΩ)
493 ± 5%
Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)]; T[K];
3550
±2%
K




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