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SEMIX105GD12T4 Datasheet(数据表) 1 Page - Semikron International

部件型号  SEMIX105GD12T4
说明  Trench IGBT Modules
下载  4 Pages
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制造商  SEMIKRON [Semikron International]
网页  http://www.semikron.com
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SEMiX105GD12T4
© by SEMIKRON
Rev. 0.2 – 10.03.2017
1
SEMiX® 5
GD
Trench IGBT Modules
Evaluation Sample
SEMiX105GD12T4
Target Data
Features
• Solderless assembling solution with
PressFIT signal pins and screw power
terminals
• IGBT 4 Trench Gate Technology
•VCE(sat) with positive temperature
coefficient
• Low inductance case
• Reliable mechanical design with
injection moulded terminals and
reliable internal connections
• UL recognized file no. E63532
• NTC temperature sensor inside
Typical Applications*
•AC inverter drives
•UPS
• Electronic Welding
Remarks
• Product reliability results are valid for
Tjop=150 °C
• Dynamic data are estimated
• For storage and case temperature with
TIM see document “TP(HALA P8)
SEMiX 5p”
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
IGBT
VCES
Tj =25°C
1200
V
IC
Tj = 175 °C
Tc =25 °C
163
A
Tc =80 °C
126
A
ICnom
100
A
ICRM
ICRM = 3xICnom
300
A
VGES
-20 ... 20
V
tpsc
VCC = 800 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj =150 °C
10
µs
Tj
-40 ... 175
°C
Inverse diode
VRRM
Tj =25°C
1200
V
IF
Tj = 175 °C
Tc =25 °C
129
A
Tc =80 °C
97
A
IFnom
100
A
IFRM
IFRM = 2xIFnom
200
A
IFSM
tp = 10 ms, sin 180°, Tj =25°C
550
A
Tj
-40 ... 175
°C
Module
It(RMS)
280
A
Tstg
module without TIM
-40 ... 125
°C
Visol
AC sinus 50Hz, t = 1 min
4000
V
Characteristics
Symbol Conditions
min.
typ.
max.
Unit
IGBT
VCE(sat)
IC =100 A
VGE =15 V
chiplevel
Tj =25 °C
1.80
2.05
V
Tj =150 °C
2.20
2.40
V
VCE0
chiplevel
Tj =25 °C
0.80
0.90
V
Tj =150 °C
0.70
0.80
V
rCE
VGE =15 V
chiplevel
Tj =25 °C
10.0
12
Tj =150 °C
15
16
VGE(th)
VGE=VCE, IC = 3.8 mA
5
5.8
6.5
V
ICES
VGE =0 V, VCE = 1200 V, Tj =25 °C
1.0
mA
Cies
VCE =25V
VGE =0 V
f=1MHz
6.2
nF
Coes
f=1MHz
0.41
nF
Cres
f=1MHz
0.35
nF
QG
VGE = - 15 V...+ 15 V
565
nC
RGint
Tj =25°C
7.5
Ω
td(on)
VCC = 600 V
IC =100 A
VGE = +15/-15 V
RG on =1 Ω
RG off =1 Ω
di/dton = 2300 A/µs
di/dtoff =800 A/µs
Tj =150 °C
t.b.d.
ns
tr
Tj =150 °C
t.b.d.
ns
Eon
Tj =150 °C
12
mJ
td(off)
Tj =150 °C
t.b.d.
ns
tf
Tj =150 °C
t.b.d.
ns
Eoff
Tj =150 °C
19
mJ
Rth(j-c)
per IGBT
0.26
K/W
Rth(c-s)
per IGBT (λgrease=0.81 W/mK,
thickness 50-100µm)
t.b.d.
K/W
Rth(c-s)
per IGBT (λ=3.4 W/mK)
t.b.d.
K/W




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