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MBR1100 数据表(PDF) 1 Page - SUNMATE electronic Co., LTD |
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MBR1100 数据表(HTML) 1 Page - SUNMATE electronic Co., LTD |
1 / 2 page MBR120-MBR1100 MBR1100 MBR180 MBR160 MBR150 MBR140 MBR130 MBR120 VOLTAGE RANGE: 20 - 100V CURRENT: 1.0 A ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity ! Case: DO-41, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. High Current Capability Protection Applications Features Mechanical Data 1 of 2 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 100°C (Note 1) IO Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM Forward Voltage @IF = 1.0A VFM Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 10 mA Typical Junction Capacitance (Note 2) C j Typical Thermal Resistance (Note 1) RJL RJA 15 50 °C/W Operating and Storage Temperature Range Tj, TSTG Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. Characteristic Symbol Unit 20 30 40 50 60 80 100 V 14 21 28 35 42 56 70 V -65 to +150 °C pF 110 80 0.50 0.70 0.85 V 40 A 1.0 A A A B C D Dim Min Max A 25.40 ¾ B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm DO-41 SCHOTTKY BARRIER RECTIFIER DIODES |
类似零件编号 - MBR1100 |
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类似说明 - MBR1100 |
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