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2SK3113 数据表(PDF) 1 Page - NEC |
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2SK3113 数据表(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D13336EJ3V0DS00 (3rd edition) Date Published August 2004 NS CP(K) Printed in Japan 1998, 2001 The mark shows major revised points. DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on) = 4.4 Ω MAX. (VGS = 10 V, ID = 1.0 A) • Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) • Gate voltage rating ±30 V • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A Drain Current (pulse) Note1 ID(pulse) ±8.0 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note3 IAS 2.0 A Single Avalanche Energy Note3 EAS 2.7 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 40 mm x 40 mm x 1.6 mm 3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V (TO-251) (TO-252) ORDERING INFORMATION PART NUMBER PACKAGE 2SK3113 TO-251 (MP-3) 2SK3113-Z TO-252 (MP-3Z) |
类似零件编号 - 2SK3113 |
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类似说明 - 2SK3113 |
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