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SI4886DY 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4886DY 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si4886DY Vishay Siliconix New Product Document Number: 71142 S-00206—Rev. A, 21-Feb-00 www.vishay.com S FaxBack 408-970-5600 2-1 N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 30 0.010 @ VGS = 10 V 13 30 0.0135 @ VGS = 4.5 V 11 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET DD G S D D S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 13 9.5 A Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 10.5 7.6 A Pulsed Drain Current IDM "50 A Continuous Source Current (Diode Conduction)a IS 2.60 1.40 Maximum Power Dissipationa TA = 25_C PD 2.95 1.56 W Maximum Power Dissipationa TA = 70_C PD 1.90 1.0 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)a t v 10 sec RthJA 35 42 _C/W Maximum Junction-to-Ambient (MOSFET)a Steady State RthJA 68 80 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 23 Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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