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2SJ603 数据表(PDF) 7 Page - NEC |
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2SJ603 数据表(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14648EJ3V0DS 7 2SJ603 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) 2) TO-262 (MP-25 Fin Cut) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 TYP. 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10 TYP. 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 4 3) TO-263 (MP-25ZJ) 4) TO-220SMD (MP-25Z) Note 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 10 TYP. 0.5R TYP. 0.8R TYP. 10 TYP. 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 0.5R TYP. 0.8R TYP. 0.75±0.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 5 |
类似零件编号 - 2SJ603 |
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类似说明 - 2SJ603 |
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