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M57959L 数据表(PDF) 2 Page - Mitsubishi Electric Semiconductor

部件名 M57959L
功能描述  HYBRID IC FOR DRIVING IGBT MODULES
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制造商  MITSUBISHI [Mitsubishi Electric Semiconductor]
网页  http://www.mitsubishichips.com
标志 MITSUBISHI - Mitsubishi Electric Semiconductor

M57959L 数据表(HTML) 2 Page - Mitsubishi Electric Semiconductor

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Sep.1998
MITSUBISHI HYBRID ICs
M57959L
HYBRID IC FOR DRIVING IGBT MODULES
Absolute Maximum Ratings, Ta = 25°C unless otherwise specified
Item
Symbol
Test Conditions
Limit
Units
Supply Voltage*
VCC
DC
18
Volts
VEE
DC
-15
Volts
Input Voltage
VI
-1 ~ 7
Volts
Output Voltage
VO
Output Voltage “H”
VCC
Volts
Output Current
IOHP
Pulse Width 2
µs, f = 20kHz
-2
Amperes
IOLP
Pulse Width 2
µs, f = 20kHz
2
Amperes
Output Current
IOH
f = 20kHz, 50% Duty Cycle
0.2
Amperes
Isolation Voltage
VRMS
Sinewave Voltage 60Hz, 1 min.
2500
Volts
Junction Temperature
Tj
85
°C
Operating Temperature
Topr
(Differs from H/C Condition)
-20 ~ 60
°C
Storage Temperature
Tstg
-25 ~ 100
°C
Fault Output Current
IFO
20
mA
Input Voltage
VR1
50
Volts
*20 Volts
≤ VCC + VEE ≤ 28 Volts
Electrical Characteristics, Ta = 25°C, VCC = 15V, -VEE = 10V unless otherwise specified
Characteristics
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Supply Voltage
VCC
Recommended Range
14
15
Volts
VEE
Recommended Range
-7
-10
Volts
Pull-up Voltage on Input Side
VIN
Recommended Range
4.75
5.00
5.25
Volts
“H” Input Current
IIH
VIN = 5V, R = 185Ω
—16
mA
“H” Output Voltage
VOH
13
14
Volts
“L” Output Voltage
VOL
-8
-9
Volts
Internal Power Dissipation
PD
f = 20kHz,
0.86
Watts
Module 200A, 600V IGBT
“L-H” Propagation Time
tPLH
VI = 0 to 4V, Tj = 85°C
0.8
1.5
µs
“L-H” Rise Time
tr
VI = 0 to 4V, Tj = 85°C
0.5
1.0
µs
“H-L” Propagation Time
tPHL
VI = 0 to 4V, Tj = 85°C
1.0
1.5
µs
“H-L” Rise Time
tr
VI = 0 to 4V, Tj = 85°C
0.3
0.6
µs
Reset Time of Protection
tRESET
1—
2
ms
Fault Output Current
IFO
—5
mA
SC Voltage
VSC
15
Volts


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