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IPB60R125C6 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPB60R125C6 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor IPB60R125C6 · FEATURES · With To-263(D2PAK) package · Low input capacitance and gate charge · Low gate input resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-ContinuousTc=25℃ Tc=100℃ 30 19 A IDM Drain Current-Single Pulsed 89 A PD Total Dissipation @TC=25℃ 219 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.57 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
类似零件编号 - IPB60R125C6 |
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类似说明 - IPB60R125C6 |
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