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IPB60R099CP 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IPB60R099CP 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor IPB60R099CP ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=1.2mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=18A 90 99 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V;Tj=25℃ VDS=600V; VGS= 0V;Tj=150℃ 5 250 μ A VSDF Diode forward voltage ISD=18A, VGS = 0 V 0.9 1.2 V |
类似零件编号 - IPB60R099CP |
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类似说明 - IPB60R099CP |
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