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SI4411DY 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4411DY 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEATURES D TrenchFETr Power MOSFET APPLICATIONS D Notebook - Load Switch - Battery Switch Si4411DY Vishay Siliconix New Product Document Number: 72149 S-03539—Rev. B, 24-Mar-03 www.vishay.com 1 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) - 30 0.010 @ VGS = - 10 V -13 - 30 0.0155 @ VGS = - 4.5 V -10 SD S D SD G D SO-8 5 6 7 8 Top View 2 3 4 1 S G D P-Channel MOSFET Ordering Information: Si4411DY Si4411DY-T1 (with tape and reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS "20 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID -13 -9 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID - 10.5 - 7.5 A Pulsed Drain Current IDM -50 A continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36 Maximum Power Dissipationa TA = 25_C PD 3.0 1.5 W Maximum Power Dissipationa TA = 70_C PD 1.9 0.95 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 10 sec R 33 42 Maximum Junction-to-Ambienta Steady State RthJA 70 85 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
类似零件编号 - SI4411DY |
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类似说明 - SI4411DY |
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